Π-Shape Silicon Window for Controlling OFF-Current in Junctionless SOI MOSFET
نویسندگان
چکیده
In this paper a modified junctionless transistor is proposed. The aim of the novel structure controlling off-current using π-shape silicon window in buried oxide under source and channel regions. changes potential profile region which conduction band energy get away from body Fermi rebuild an electrostatic potential. Beside significant reduced off-current, on current has acceptable value Silicon Region Junctionless MOSFET (SR-JMOSFET) than Conventional (C-JMOSFET). Moreover, replacing material instead dioxide causes maximum temperature region. situation heat could transfer to reduces active region, significantly. simulation with two-dimensional ATLAS simulator shows that short effects such as subthreshold DIBL are controlled effectively SR-JMOSFET. Also, optimum values length thickness defined obtain best behavior device.
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ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01492-8